inchange semiconductor isc product specification isc silicon npn power transistor 2SC2654 description high collector current:: i c = 7a low collector saturation voltage :v ce( sat ) = 0.3(v)(max)@i c = 3a complement to type 2sa1129 applications designed for low-frequency power amplifiers and mid-speed switching applications. ideal for use in a lamp driver. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 7 v i c collector current-continuous 7 a i cm collector current-peak 15 a i b b base current- continuous 3.5 a total power dissipation @ t a =25 1.5 p c total power dissipation @ t c =25 40 w t j junction temperature 150 t stg storage temperature range -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC2654 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat)-1 collector-emitter saturation voltage i c = 3a; i b = 0.1a b 0.3 v v ce (sat)-2 collector-emitter saturation voltage i c = 5a; i b = 0.5a b 0.6 v v be (sat)-1 base-emitter saturation voltage i c = 3a; i b = 0.1a b 1.5 v v be (sat)-2 base-emitter saturation voltage i c = 5a; i b = 0.5a b 2.0 v i cbo collector cutoff current v cb = 40v ; i e = 0 10 a i ebo emitter cutoff current v eb = 5v; i c = 0 10 a h fe-1 dc current gain i c = 3a ; v ce = 1v 40 320 h fe-2 dc current gain i c = 5a ; v ce = 1v 20 switching times t on turn-on time 1.0 s t stg storage time 2.5 s t f fall time i c = 5a ,r l = 4 , i b1 = -i b2 = 0.5a,v cc 20v 1.0 s ? h fe- 1 classifications m l k j 40-80 60-120 100-200 160-320 isc website www.iscsemi.cn 2
|
